1N6471E3 |
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Manufacturer
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Manufacturer Product Number
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1N6471E3
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Product Description
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DIODE GEN PURP 400V 400MA DO35 |
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773 Group Part Number |
1N6471E3 |
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Other Description
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Diode 400 V 400mA Through Hole DO-35 (DO-204AH)
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Type
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Description
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ECCN
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EAR99
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Environmental Information II
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https://ww1.microchip.com/downloads/aemDocuments/documents/corporate-responsibilty/environmental/product-regulatory-information/Microchip_REACH_Statement.pdf
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HTSUS
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8541.10.0070
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REACH
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REACH Unaffected
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| Part No. | Manufacturer | Detailed Description | RFQ |
|---|---|---|---|
| DSI75-12B | IXYS | DIODE GP 1.2KV 110A DO203AB | RFQ |
| R6100825XXYZ | Powerex Inc. | DIODE GP 800V 250A DO205AB DO9 | RFQ |
| R6110825XXYZ | Powerex Inc. | DIODE GP REV 800V 250A DO205AB | RFQ |
| UF1A R1G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | RFQ |
| SF11GHR0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | RFQ |
| UF4001HA0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | RFQ |
| 1N4001G R0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | RFQ |
| UF4001HB0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | RFQ |
| UF1AHB0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A DO204AL | RFQ |
| 1N4934G R1G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A DO204AL | RFQ |
