IXYH75N65C3DI

Manufacturer

IXYS

Manufacturer Product Number

IXYH75N65C3DI

Product Description

The IXYH75N65C3D1 is a 650V, 175A N-channel insulated-gate bipolar transistor (IGBT) developed by IXYS, now part of Littelfuse. Manufactured using the GenX3™ IGBT process and the eXtreme-light Punch Through (XPT™) design platform, this device offers high current handling capabilities, rapid switching performance, and low total energy losses. It features a low collector-emitter saturation voltage of 2.3V and a fall time of 60 nanoseconds, making it suitable for applications requiring efficient switching. The IGBT is housed in a TO-247 package and includes an anti-parallel ultra-fast diode, enhancing its performance in hard-switching environments. Typical applications encompass battery chargers, lamp ballasts, power inverters, power factor correction circuits, switched-mode power supplies, uninterruptible power supplies, and welding machines. However, as of October 20, 2024, the IXYH75N65C3D1 has been designated as obsolete.

773 Group Part Number

IXYH75N65C3DI

Other Description

650V, 175A, 750W Through-Hole IGBT in a TO-247 Package (IXYH)