JANTXV1N5809US

Manufacturer
Part Number
JANTXV1N5809US
Product Description
DIODE GEN PURP 100V 3A B SQ-MELF
SKU
JANTXV1N5809US-2208651
Other Description
Diode 100 V 3A Surface Mount B, SQ-MELF

Qty:

Demand History
JANTXV1N5809US by Microchip Technology
Part Details
Type
Description
Export Control
EAR99
Documentation
Harmonized Tariff
8541.10.0080
Moisture Sensitivity Level
1 (Unlimited)
Alternates
JANTXV1N5809US | 1086-2847-MIL | 1086-2847
SVHC-Free
RoHS Compliance
RoHS non-compliant
Part Series
Military, MIL-PRF-19500/477
Qty Available
1

Request Quote


Part No. Manufacturer Detailed Description Request
DSA9-12F IXYS DIODE AVAL 1.2KV 11A DO203AA Request
R6111025XXYZ Powerex Inc. DIODE GP REV 1KV 250A DO205AB Request
HER101G A0G Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Request
HER101G R1G Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Request
HER101-T Diodes Incorporated DIODE GEN PURP 50V 1A DO41 Request
UF4001 onsemi DIODE GEN PURP 50V 1A DO41 Request
1N4001GHR0G Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Request
1N4001G R1G Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Request
1N4001GP onsemi DIODE GEN PURP 50V 1A DO41 Request
UF4001HR1G Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Request